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STMicroelectronics | STD18N55M5

Manufacturer Part #

STD18N55M5

N-Channel 550 V 0.18 mOhm 13 A 90 W Surface Mount Power Mosfet - TO-252

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Mfr. Name: STMicroelectronics
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Product Specification Section
STMicroelectronics STD18N55M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 550V
Drain-Source On Resistance-Max: 0.18Ω
Rated Power Dissipation: 90|W
Qg Gate Charge: 31nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The STD18N55M5 is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. 

The resulting product has extremely low on-resistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features:

  • DPAK worldwide best RDS(on)
  • Higher VDSS rating
  • High dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Applications:

  • Switching application

View the list of available STD18N Series of MOSFETs

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$4,175.00
USD
Quantity
Unit Price
2,500+
$1.67
Product Variant Information section