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Nexperia | PSMN102-200Y,115

Manufacturer Part #

PSMN102-200Y,115

PSMN102 Series 200 V 21.5A N-Ch. TrenchMOS SiliconMAX Standard Level FET - LFPAK

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2523
Product Specification Section
Nexperia PSMN102-200Y,115 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 102mΩ
Rated Power Dissipation: 113W
Qg Gate Charge: 30.7nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21.5A
Turn-on Delay Time: 14.2ns
Turn-off Delay Time: 33ns
Rise Time: 29.5ns
Fall Time: 28ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: TrenchMOS
Input Capacitance: 1568pF
Package Style:  SOT-669
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:Order inventroy details
9,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1500
Multiple Of:
1500
Total
$1,605.00
USD
Quantity
Unit Price
1,500
$1.07
4,500
$1.06
7,500+
$1.05
Product Variant Information section