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Manufacturer Part #
R6020KNX
N-Channel 600 V 20 A 196 mOhm 68 W Through Hole Power MOSFET - TO-220FM
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| Mfr. Name: | ROHM | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:500 per Bulk Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
ROHM R6020KNX - Product Specification
Shipping Information:
ECCN:
PCN Information:
PowerTransistor_Material change(organic film) and Addition of Shiga Factory for High Voltage MOSFET.Chamge Details: Before:Factory:RohmApollo ChikugoOrganic Film:Polyimide After:Factory:RohmApollo Chikugo and Rohm Shiga FactoryOrganic Film:Polyimide Reason:This transfer will increase production capacity and stabilize production which contribute to BCP, and the organic thin film materials contain an environmental regulation.
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=R6020KNX&field4=ROHM&field18=https://p1na.futureelectronics.com/p/4116214
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=R6020KNX&field4=ROHM&field18=https://p1na.futureelectronics.com/p/4116214
ROHM R6020KNX - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 196mΩ |
| Rated Power Dissipation: | 68W |
| Qg Gate Charge: | 40nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 30ns |
| Turn-off Delay Time: | 55ns |
| Rise Time: | 30ns |
| Fall Time: | 10ns |
| Gate Source Threshold: | 5V |
| Input Capacitance: | 1550pF |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
500 per Bulk
Mounting Method:
Through Hole