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Infineon | BSC019N06NSATMA1

Manufacturer Part #

BSC019N06NSATMA1

Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC019N06NSATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 1.95mΩ
Rated Power Dissipation: 136W
Qg Gate Charge: 77nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 26ns
Rise Time: 7ns
Fall Time: 8ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.3V
Input Capacitance: 5250pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$6,950.00
USD
Quantity
Unit Price
5,000+
$1.39
Product Variant Information section