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Infineon | IRFB4110PBF

Manufacturer Part #

IRFB4110PBF

Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2247
Product Specification Section
Infineon IRFB4110PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.5mΩ
Rated Power Dissipation: 370W
Qg Gate Charge: 210nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 78ns
Rise Time: 67ns
Fall Time: 88ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 9620pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
7,014
USA:
7,014
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$58.00
USD
Quantity
Unit Price
50
$1.16
200
$1.14
750
$1.13
2,000
$1.11
5,000+
$1.10
Product Variant Information section