text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRF7815TRPBF

Infineon | IRF7815TRPBF

Manufacturer Part #

IRF7815TRPBF

Single N-Channel 150 V 43 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2431
Product Specification Section
Infineon IRF7815TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 43mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 38nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.1A
Turn-on Delay Time: 8.4ns
Turn-off Delay Time: 14ns
Rise Time: 3.2ns
Fall Time: 8.3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Input Capacitance: 1647pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The IRF7815TRPBF is a single N-Channel 50 V 2.5 W 25nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.

Features:

  • Very Low RDS(on) at 10 V VGS
  • Low Gate Charge
  • Fully Characterized Avalanche Voltage and Current
  • 20 V VGS Max. Gate Rating

Applications:

  • Synchronous MOSFET for Notebook Processor Power
  • Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Pricing Section
Global Stock:
4,000
USA:
4,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$2,440.00
USD
Quantity
Unit Price
4,000
$0.61
8,000
$0.60
12,000+
$0.595
Product Variant Information section