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Infineon | IRFB3307ZPBF

Manufacturer Part #

IRFB3307ZPBF

Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 1624
Product Specification Section
Infineon IRFB3307ZPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 5.8mΩ
Rated Power Dissipation: 230W
Qg Gate Charge: 79nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 128A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 38ns
Rise Time: 64ns
Fall Time: 65ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Input Capacitance: 4750pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
8
USA:
8
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$1.11
USD
Quantity
Unit Price
1
$1.11
40
$1.10
200
$1.08
750
$1.06
3,000+
$1.03
Product Variant Information section