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  6. IRFB3307ZPBF

Infineon | IRFB3307ZPBF

Manufacturer Part #

IRFB3307ZPBF

Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 1624
Product Specification Section
Infineon IRFB3307ZPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 5.8mΩ
Rated Power Dissipation: 230W
Qg Gate Charge: 79nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 128A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 38ns
Rise Time: 64ns
Fall Time: 65ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Input Capacitance: 4750pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
8
USA:
8
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
8
Multiple Of:
1
Total
$17.12
USD
Quantity
Unit Price
10
$2.14
40
$2.11
150
$2.08
400
$2.06
1,500+
$2.00
Product Variant Information section