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Manufacturer Part #
STP9NM60N
Single N-Channel 600 V 0.7 Ohm 17.4 nC 70 W MDmesh™ II Power MOSFET -TO-220-3
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) |
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STMicroelectronics STP9NM60N - Product Specification
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STMicroelectronics STP9NM60N - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.7Ω |
| Rated Power Dissipation: | 70|W |
| Qg Gate Charge: | 17.4nC |
| Package Style: | TO-220-3 (TO-220AB) |
Features & Applications
The STP9NM60N is a N-Channel MDmesh™ II Power MOSFET. This series of devices is realized with the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features:
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications:
- Switching applications
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)