onsemi | MJD253T4G

The MJD253T4G is a part of MJD series PNP Bipolar Power Transistor. It has a storage temperature ranging from -65°C to +150°C and its available in TO-252-3 package.

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.

Features:

• Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain
  • hFE = 40 (Min) @ IC= 200 mAdc
  • hFE= 15 (Min) @ IC = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Straight Lead Version in Plastic Sleeves
• Lead Formed Version in 16 mm Tape and Reel
• Low Collector-Emitter Saturation Voltage:
  • VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
  • VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
• High Current-Gain-Bandwith Product
  • fT = 40MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage
  • ICBO = 100 nAdc @ Rated VCB
• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These are PbFree Packages