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Manufacturer Part #

MJD253T4G

MJD Series 100 V 4 A PNP Complementary Silicon Plastic Power Transistor TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2514
Product Specification Section
onsemi MJD253T4G - Technical Attributes
Attributes Table
Polarity: PNP
Type: Power Transistor
CE Voltage-Max: 100V
Collector Current Max: 4A
Power Dissipation-Tot: 1.4W
DC Current Gain-Min: 40
Package Style:  TO-252-3 (DPAK)
Features & Applications

The MJD253T4G is a part of MJD series PNP Bipolar Power Transistor. It has a storage temperature ranging from -65°C to +150°C and its available in TO-252-3 package.

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.

Features:

  • Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    • hFE = 40 (Min) @ IC= 200 mAdc
    • hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves
  • Straight Lead Version in Plastic Sleeves
  • Lead Formed Version in 16 mm Tape and Reel
  • Low Collector-Emitter Saturation Voltage:
    • VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    • VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product
    • fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage
    • ICBO = 100 nAdc @ Rated VCB
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Packages
Pricing Section
Global Stock:
2,500
USA:
2,500
20,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$420.00
USD
Quantity
Unit Price
2,500
$0.168
5,000
$0.166
7,500
$0.165
10,000
$0.164
12,500+
$0.161
Product Variant Information section