IPN70R1K4P7SATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Infineon | IPN70R1K4P7SATMA1

Manufacturer Part #

IPN70R1K4P7SATMA1

Single N-Channel 700 V 1.4 Ohm 4.7 nC CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN70R1K4P7SATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 700V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 6.2W
Qg Gate Charge: 4.7nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 4A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 63ns
Rise Time: 4.9ns
Fall Time: 61ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 158pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$366.00
USD
Quantity
Unit Price
3,000
$0.122
6,000
$0.121
9,000
$0.12
15,000
$0.119
30,000+
$0.117
Product Variant Information section