FDS6690A in Cut Tape by onsemi | Mosfets | Future Electronics
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onsemi | FDS6690A

Manufacturer Part #

FDS6690A

N-Channel 30 V 12.5 mΩ Surface Mount PowerTrench Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2031
Product Specification Section
onsemi FDS6690A - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 12.5mΩ
Rated Power Dissipation: 1|W
Qg Gate Charge: 16nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6690A is a 30 V 12.5 mΩ N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features:

  • 11 A, 30 V
  • RDS(ON) = 12.5 mΩ @ VGS = 10 V
  • RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability 

Applications:

  • Low voltage
  • Battery powered applications
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Read More...
Pricing Section
Global Stock:
12
USA:
12
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.71
USD
Quantity
Unit Price
1
$0.71
15
$0.615
75
$0.56
250
$0.515
1,250+
$0.46
Product Variant Information section