onsemi | NDS355AN

The NDS355AN is a Part of NDS Series N-Channel Logic Level Enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

• 1.7 A, 30 V
• RDS(ON) = 0.125Ω @ VGS= 4.5 V
• RDS(ON) = 0.085 Ω @ VGS= 10 V
• Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
• High density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
• Compact industry standard SOT-23 surface mount package.

Applications:

• Automation
• Broadband Access
• Broadband Modem
• Broadcast & Studio
• Building & Home Control
• Camcorder