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Manufacturer Part #

SI1034CX-T1-GE3

Dual N-Channel 20 V 0.22 W 1.2 nC Silicon Surface Mount Mosfet - SC-89-6

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI1034CX-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.76Ω
Rated Power Dissipation: 0.22W
Qg Gate Charge: 1.2nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 0.61A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 26ns
Rise Time: 24ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Si
Height - Max: 0.6mm
Length: 1.7mm
Input Capacitance: 43pF
Pricing Section
Global Stock:
0
USA:
0
144,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$567.00
USD
Quantity
Unit Price
3,000
$0.189
6,000
$0.187
12,000
$0.185
15,000
$0.184
45,000+
$0.18
Product Variant Information section