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Manufacturer Part #

FDMS86350

Single N-Channel 80 V 2.7 W 155 nC Silicon Surface Mount Mosfet - POWER 56-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2525
Product Specification Section
onsemi FDMS86350 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 3.8mΩ
Rated Power Dissipation: 2.7W
Qg Gate Charge: 155nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 25A
Turn-on Delay Time: 50ns
Turn-off Delay Time: 40ns
Rise Time: 55ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Technology: Si
Height - Max: 1.1mm
Length: 5.1mm
Input Capacitance: 8030pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$6,000.00
USD
Quantity
Unit Price
3,000+
$2.00
Product Variant Information section