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Infineon | IPT020N10N5ATMA1

Manufacturer Part #

IPT020N10N5ATMA1

N-Channel 100 V 260 A 273 W SMT OptiMOSTM5 Power Transistor - PG-HSOF-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2519
Product Specification Section
Infineon IPT020N10N5ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2mΩ
Rated Power Dissipation: 273W
Qg Gate Charge: 122nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 31A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 49ns
Rise Time: 13ns
Fall Time: 17ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 8700pF
Series: OptiMOS 5
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$3,720.00
USD
Quantity
Unit Price
2,000+
$1.86
Product Variant Information section