text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. FDN342P

onsemi | FDN342P

Manufacturer Part #

FDN342P

P-Channel 20 V 0.08 Ohm 2.5V Specified PowerTrench Mosfet SSOT-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2332
Product Specification Section
onsemi FDN342P - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.08Ω
Rated Power Dissipation: 0.5|W
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications

The FDN342P is a 20 V 0.08 Ω P-Channel 2.5 V specified MOSFET is produced in a rugged gate version of advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V - 12 V)

Features:

  • -2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V, RDS(ON) = 0.13 Ω @ VGS = -2.5 V.
  • Extended VGSS range (±12V) for battery applications.
  • High performance trench technology for extremely low RDS(ON).
  • Enhanced power SuperSOT™-3 (SOT-23).

Applications:

  • Load Switch
  • Battery Protection
  • Power management
Pricing Section
Global Stock:
63,000
USA:
63,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$345.00
USD
Quantity
Unit Price
3,000
$0.115
9,000
$0.113
15,000
$0.112
30,000
$0.111
60,000+
$0.109
Product Variant Information section