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Manufacturer Part #
IRFD110PBF
Single N-Channel 60 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:100 per Tube Package Style:DIP-4 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay IRFD110PBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Discontinuation
05/22/2024 Details and Download
Description of Change:Vishay Siliconix announces the end of life of commercial HVM Power MOSFET parts (low volume Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelReason for Change: Termination of 6-inch wafer foundry at Tower Semiconductor, Israel Last Time Buy Date: Mon Nov 18, 2024Last Time Ship Date: Sun May 18, 2025
Part Status:
Obsolete
Obsolete
Vishay IRFD110PBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.54Ω |
| Rated Power Dissipation: | 1.3|W |
| Qg Gate Charge: | 8.3nC |
| Package Style: | DIP-4 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
1
$0.555
75
$0.54
250
$0.53
750
$0.515
2,500+
$0.49
Product Variant Information section
Available Packaging
Package Qty:
100 per Tube
Package Style:
DIP-4
Mounting Method:
Through Hole