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Manufacturer Part #

SI1922EDH-T1-GE3

MOSFET 20V 1.3A 1.25W

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2415
Product Specification Section
Vishay SI1922EDH-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 198mΩ
Rated Power Dissipation: 1.25|W
Qg Gate Charge: 2.5nC
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
24,000
USA:
24,000
42,000
Factory Stock:Factory Stock:
231,000
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$372.00
USD
Quantity
Unit Price
3,000
$0.124
9,000
$0.122
12,000
$0.121
30,000
$0.12
45,000+
$0.118
Product Variant Information section