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onsemi | BDX33BG

Manufacturer Part #

BDX33BG

BDX Series 80 V 10 A Darlington Complementary Silicon Power Transistor TO-220AB

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi BDX33BG - Technical Attributes
Attributes Table
Polarity: NPN
Type: Darlington
CE Voltage-Max: 80V
Collector Current Max: 10A
DC Current Gain-Min: 750
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

Features:

  • High DC Current Gain
  • hFE = 2500 (typ.) at IC = 4.0
  • Collector-Emitter Sustaining Voltage at 100 mAdc
  • VCEO(sus) = 80 Vdc (min.) BDX33B, 34B
  • VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
  • Low Collector-Emitter Saturation Voltage
  • VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
  • Monolithic Construction with Build-In Base-Emitter Shunt resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
1700
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$705.50
USD
Quantity
Unit Price
50
$0.445
200
$0.435
750
$0.42
1,250
$0.415
2,500+
$0.405
Product Variant Information section
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