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Manufacturer Part #

APT80M60J

APT80M60J N-Channel 600 V 52 A 55 mOhm 600 nC Mosfet - SOT-227-4

ECAD Model:
Mfr. Name: Microchip
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Microchip APT80M60J - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 55mΩ
Rated Power Dissipation: 960W
Qg Gate Charge: 600nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 84A
Turn-on Delay Time: 135ns
Turn-off Delay Time: 410ns
Rise Time: 155ns
Fall Time: 125ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 24000pF
Series: Power MOS 8
Package Style:  SOT-227
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
58
Multiple Of:
1
Total
$3,261.34
USD
Quantity
Unit Price
1
$58.18
4
$57.44
15
$56.75
40
$56.23
100+
$55.41
Product Variant Information section