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Diodes Incorporated | DMG4496SSS-13

Manufacturer Part #

DMG4496SSS-13

Single N-Channel 30 V 29 mOhm 4.7 nC 1.42 W Silicon Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMG4496SSS-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 29MΩ
Rated Power Dissipation: 1.42W
Qg Gate Charge: 4.7nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 10A
Turn-on Delay Time: 4.76ns
Turn-off Delay Time: 19.5ns
Rise Time: 3.64ns
Fall Time: 4.9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 1.5mm
Length: 4.95mm
Input Capacitance: 493.5pF
Package Style:  MSOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$277.50
USD
Quantity
Unit Price
2,500
$0.111
5,000
$0.109
10,000
$0.108
37,500+
$0.105
Product Variant Information section