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Diodes Incorporated | DMG6402LVT-7

Manufacturer Part #

DMG6402LVT-7

Single N-Channel 30 V 42 mOhm 11.4 nC 1.75 W Silicon SMT Mosfet - TSOT-26

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2331
Product Specification Section
Diodes Incorporated DMG6402LVT-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 42mΩ
Rated Power Dissipation: 1.75W
Qg Gate Charge: 11.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 3.4ns
Turn-off Delay Time: 13.9ns
Rise Time: 6.2ns
Fall Time: 2.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 1mm
Length: 2.9mm
Input Capacitance: 498pF
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
Germany:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$228.00
USD
Quantity
Unit Price
3,000
$0.076
6,000
$0.0748
12,000
$0.0736
15,000
$0.0732
45,000+
$0.0708
Product Variant Information section