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Manufacturer Part #

IPP076N12N3GXKSA1

Single N-Channel 120 V 7.6 mOhm 76 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP076N12N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 120V
Drain-Source On Resistance-Max: 7.6mΩ
Rated Power Dissipation: 188|W
Qg Gate Charge: 76nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$515.00
USD
Quantity
Unit Price
50
$1.03
1,000
$1.01
2,000
$0.995
2,500
$0.99
7,500+
$0.965
Product Variant Information section