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Manufacturer Part #
IRF630STRLPBF
Single N-Channel 200 V 0.4 Ohms Surface Mount Power Mosfet - TO-263
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2023 | ||||||||||
Vishay IRF630STRLPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF630STRLPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/irf630strlpbf-vishay-4878278
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF630STRLPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/irf630strlpbf-vishay-4878278
Vishay IRF630STRLPBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.4Ω |
| Rated Power Dissipation: | 74|W |
| Qg Gate Charge: | 43nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
800 per
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount