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Manufacturer Part #
IRFU3410PBF
Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-251AA
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:75 per Tube Package Style:TO-251 (IPAK) Mounting Method:Through Hole | ||||||||||
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Infineon IRFU3410PBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFU3410PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/irfu3410pbf-infineon-7005549
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFU3410PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/irfu3410pbf-infineon-7005549
Infineon IRFU3410PBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 39mΩ |
| Rated Power Dissipation: | 110|W |
| Qg Gate Charge: | 37nC |
| Package Style: | TO-251 (IPAK) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
75 per Tube
Package Style:
TO-251 (IPAK)
Mounting Method:
Through Hole