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Manufacturer Part #

NVHL080N120SC1

N-Channel 1200 V 44 A 348 W Through Hole Silicon Carbide MOSFET - TO-247-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2336
Product Specification Section
onsemi NVHL080N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Not Recommended for New Designs
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 31A
Input Capacitance: 1112pF
Power Dissipation: 178W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
450
USA:
450
On Order:
0
Factory Stock:Factory Stock:
36,450
Factory Lead Time:
8 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,117.50
USD
Quantity
Unit Price
450+
$9.15
Product Variant Information section