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Manufacturer Part #

SI9926CDY-T1-GE3

Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2523
Product Specification Section
Vishay SI9926CDY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.018Ω
Rated Power Dissipation: 3.1|W
Qg Gate Charge: 33nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,975.00
USD
Quantity
Unit Price
2,500
$0.79
5,000
$0.78
7,500
$0.77
10,000+
$0.765
Product Variant Information section