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Manufacturer Part #

SIJ482DP-T1-GE3

N-Channel 80 V 6.2 mOhm 69.4 W SMT TrenchFET Mosfet - PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIJ482DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 6.2mΩ
Rated Power Dissipation: 5W
Qg Gate Charge: 47nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21.1A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 36ns
Rise Time: 11ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.7V
Input Capacitance: 2425pF
Package Style:  POWERPAK-SO-8L
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Total
$4,980.00
USD
Quantity
Unit Price
3,000+
$1.66
Product Variant Information section