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Manufacturer Part #
SPD15P10PLGBTMA1
Single P-Channel 100 V 200 mOhm 47 nC SIPMOS® Power Mosfet - DPAK
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount |
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| Date Code: | 2526 | ||||||||||
Infineon SPD15P10PLGBTMA1 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Detailed change informationSubject Transfer of wafer production, wafer test and pre-assembly location to IFX Kulim, and change of wafer diameter from 150 mm to 200 mm, and implementation of new mould compound for PG-TO252 package, for P-Channel Small Signal and Power MOSFETsReason Wafer production, wafer test and pre-assembly location will be transferred according to the global Infineon production strategyDescription Wafer production and wafer test locationWafer diameterPre-assembly location Wafer LotnumberMould compound(PG-TO252)Halogen Free Flag (PG-TO252)OPN incl. SP#(PG-TO252)Production Lot code Marking on device (PG-TO252) Note: See SPCN document for detailed description of changesIntended start of delivery 2026-03-31 or earlier based on customer approval
Part Status:
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Infineon SPD15P10PLGBTMA1 - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 200mΩ |
| Rated Power Dissipation: | 128|W |
| Qg Gate Charge: | 47nC |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount