text.skipToContent text.skipToNavigation

Manufacturer Part #

STD4N90K5

N-Channel 900 V 2.1 Ohm 5.3 nC MDmesh™ K5 Power Mosfet - TO-252

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD4N90K5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 900V
Drain-Source On Resistance-Max: 2.1Ω
Rated Power Dissipation: 60W
Qg Gate Charge: 5.3nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 3A
Turn-on Delay Time: 10.5ns
Turn-off Delay Time: 26.4ns
Rise Time: 11.8ns
Fall Time: 25.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 173pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,000.00
USD
Quantity
Unit Price
2,500
$0.80
5,000
$0.79
7,500
$0.785
10,000+
$0.775
Product Variant Information section