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STMicroelectronics | STD9NM50N

Manufacturer Part #

STD9NM50N

N-Channel 500 V 0.79 Ohm Surface Mount MDmesh™II Power MOSFET - DPAK-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD9NM50N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 790mΩ
Rated Power Dissipation: 45|W
Qg Gate Charge: 14nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The STD9NM50N device implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,662.50
USD
Quantity
Unit Price
2,500
$0.665
5,000
$0.655
7,500
$0.65
12,500+
$0.635
Product Variant Information section