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Manufacturer Part #

STP14NM50N

N-Channel 500 V 0.32 Ohm Flange Mount MDmesh II Power Mosfet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP14NM50N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 0.32Ω
Rated Power Dissipation: 90|W
Qg Gate Charge: 27nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The STP14NM50N device is made using the second generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$2,110.00
USD
Quantity
Unit Price
50
$2.17
200
$2.14
750
$2.11
1,250
$2.10
2,500+
$2.06
Product Variant Information section