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Manufacturer Part #

STP6NK90Z

N-Channel 900 V 2 Ω SuperMESH Power Mosfet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP6NK90Z - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 900V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 140|W
Qg Gate Charge: 60.5nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The STP6NK90Z is a superMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability

Applications:

  • Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$6,900.00
USD
Quantity
Unit Price
50
$3.63
150
$3.58
500
$3.53
1,000
$3.50
2,000+
$3.45
Product Variant Information section