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Manufacturer Part #

STP6NK60Z

N-Channel 600 V 1.2 Ohm SuperMESH Power MosFet - TO-220

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1941
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 1.2Ω
Rated Power Dissipation: 110W
Qg Gate Charge: 33nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 6A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 47ns
Rise Time: 14ns
Fall Time: 19ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.75V
Input Capacitance: 905pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The STP6NK60Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized

Applications:

  • Switching applications
Pricing Section
Stock:
14,100
Minimum Order:
50
Multiple Of:
50
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Total
$48.25
USD
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Quantity
Web Price
50
$0.965
200
$0.815
750
$0.78
2,000
$0.755
5,000+
$0.735
Product Variant Information section