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Manufacturer Part #
STP6NK60Z
N-Channel 600 V 1.2 Ohm SuperMESH Power MosFet - TO-220
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole |
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STMicroelectronics STP6NK60Z - Product Specification
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STMicroelectronics STP6NK60Z - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 1.2Ω |
| Rated Power Dissipation: | 110W |
| Qg Gate Charge: | 33nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 6A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 47ns |
| Rise Time: | 14ns |
| Fall Time: | 19ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.75V |
| Input Capacitance: | 905pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Features & Applications
The STP6NK60Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Features:
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
Applications:
- Switching applications
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole
