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Référence fabricant

STW30N65M5

N-Channel 650 V 0.139 Ohm Flange Mount MDmesh V Power MosFet - TO-247

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STW30N65M5 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.139Ω
Rated Power Dissipation: 140|W
Qg Gate Charge: 64nC
Style d'emballage :  TO-247-3
Méthode de montage : Flange Mount
Fonctionnalités et applications

The STW30W65M5 MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features:

  • Worldwide best RDS(on)*area
  • Higher VDSS rating
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested
  • High dv/dt capability

Applications:

  • Switching applications

View the Complete family of STW3 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
20 Semaines
Commande minimale :
600
Multiples de :
30
Total 
1 860,00 $
USD
Quantité
Prix unitaire
30
$3.20
120
$3.15
450
$3.10
750
$3.08
1 500+
$3.02
Product Variant Information section