Infineon | IR2111STRPBF

The IR2111STRPBF is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for halfbridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features

Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set deadtime
High side output in phase with input
Lead-Free

The IR2111STRPBF is a Half-Bridge Driver. It comes in a SOIC-8 package and is shipped in reels.