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Référence fabricant

IRS2181STRPBF

IRS2181 Series 600 V 1.9 A 20 V Supply Dual High And Low Side Driver - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 2439
Product Specification Section
Infineon IRS2181STRPBF - Caractéristiques techniques
Attributes Table
Configuration: High and Low Side
No of Outputs: Dual
Peak Output Current: 2.3A
Supply Voltage-Max: 20V
Rated Power Dissipation: 0.625W
Quiescent Current: 120µA
Turn-off Delay Time: 220ns
Turn-on Delay Time: 180ns
Rise Time: 40ns
Fall Time: 20ns
Operating Temp Range: -40°C to +125°C
Style d'emballage :  SOIC-8N
Méthode de montage : Surface Mount
Fonctionnalités et applications
The IRS2181STRPBF is a high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. It has an operating temperature ranging from -40 to 125°C and is available in SOIC-8 Package.

Features:

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V and 5 V input logic compatible
  • Matched propagation delay for both channels
  • Logic and power ground +/- 5 V offset
  • Lower di/dt gate driver for better noise immunity
  • Output source/sink current capability 1.4 A/1.8 A
  • RoHS compliant
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
22 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
1 975,00 $
USD
Quantité
Prix unitaire
2 500+
$0.79
Product Variant Information section