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Référence fabricant

MMBD352WT1G

MMBD352WT1 Series 7 V 10 uA SMT Dual Schottky Barrier Diode - SC-70

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2530
Product Specification Section
onsemi MMBD352WT1G - Caractéristiques techniques
Attributes Table
Reverse Voltage-Max [Vrrm]: 7V
Reverse Current-Max: 10µA
Forward Voltage: 0.6V
Power Dissipation: 300mW
Style d'emballage :  SOT-323 (SC-70)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The MMBD352W devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra-fast switching circuits.

Key Features:

  • Very Low Capacitance - Less Than 1.0 pF @ Zero V
  • Low Forward Voltage - 0.5 V (Typ) @ IF = 10 mA
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Note:

  • Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow

Learn more about the MMBD352 Family of Schottky Diodes

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
31 Semaines
Commande minimale :
18000
Multiples de :
3000
Total 
658,80 $
USD
Quantité
Prix unitaire
3 000
$0.038
6 000
$0.0374
12 000
$0.0367
15 000
$0.0366
45 000+
$0.0354
Product Variant Information section