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NXP | BFU790F,115

Manufacturer Part #

BFU790F,115

BFU790 Series 2.8 V 19.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP BFU790F,115 - Technical Attributes
Attributes Table
Polarity: NPN
Type: RF
CE Voltage-Max: 2.8V
Collector Current Max: 100mA
Power Dissipation-Tot: 234mW
Collector - Base Voltage: 10V
Emitter - Base Voltage: 1V
DC Current Gain-Min: 235
Collector - Current Cutoff: 100nA
Configuration: Single
Frequency - Transition: 25GHz
Noise Figure: 0.5dB
Moisture Sensitivity Level: 1
Package Style:  SOT-343F-4
Mounting Method: Surface Mount
Features & Applications

The BFU790F Series is a NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features:

  • Low noise high linearity microwave transistor
  • 110 GHz fT silicon germanium technology
  • High maximum output power at 1 dB compression 20 dBm at 1.8 GHz

Applications:

  • High linearity applications
  • Medium output power applications
  • Wi-Fi / WLAN / WiMAX
  • ZigBee
  • LTE, cellular, UMTS

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
CALL Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$990.00
USD
Quantity
Unit Price
3,000
$0.33
6,000
$0.326
9,000
$0.324
12,000+
$0.32
Product Variant Information section