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onsemi | MJD50T4G

Manufacturer Part #

MJD50T4G

MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2525
Product Specification Section
onsemi MJD50T4G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 400V
Collector Current Max: 1A
Power Dissipation-Tot: 1.56W
DC Current Gain-Min: 30
Package Style:  TO-252-3 (DPAK)
Mounting Method: Tab Mount
Features & Applications
The MJD50T4G is a High Voltage Power Transistor with Collector-Emitter Voltage of 400 V, available in a TO-252 package.

Features:

  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Electrically Similar to Popular TIP47, and TIP50
  • 250 and 400 V (Min) - VCEO(sus)
  • 1 A Rated Collector Current
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • ESD Ratings:
    • Human Body Model, 3B > 8000 V
    • Machine Model, C > 400 V
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are Pb-Free Packages

Applications:

  • Switching Applications
  • Audio output amplifiers

View the List of available MJD50 Series of Bipolar Transistors

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
25 Weeks
Minimum Order:
5000
Multiple Of:
2500
Total
$1,075.00
USD
Quantity
Unit Price
2,500
$0.215
7,500+
$0.21
Product Variant Information section