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Manufacturer Part #

PBSS4350T,215

PBSS4350T Series 50 V 2 A SMT NPN Low VCEsat (BISS) Transistor - SOT-23

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2536
Product Specification Section
Nexperia PBSS4350T,215 - Technical Attributes
Attributes Table
Polarity: NPN
Type: Small Signal
CE Voltage-Max: 50V
Collector Current Max: 2A
Power Dissipation-Tot: 300mW
Collector - Base Voltage: 50V
Collector - Emitter Saturation Voltage: 260mV
Emitter - Base Voltage: 5V
DC Current Gain-Min: 200
Collector - Current Cutoff: 100nA
Configuration: Single
Frequency - Transition: 100MHz
Operating Temp Range: -65°C to +150°C
Moisture Sensitivity Level: 1
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The PBSS4350T,215 is a Part of PBSS4350T Series 50 V 3 A NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor. Operating temperature ranges from -65 to 150°C and available in SOT-23-3 Surface-Mounted Device plastic package.

Features:

  • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
  • High collector current capability
  • High collector current gain
  • Improved efficiency due to reduced heat generation

Applications:

  • Power management applications
  • Low and medium power DC/DC convertors
  • Supply line switching
  • Battery chargers
  • Linear voltage regulation with low voltage drop-out (LDO)

Pricing Section
Global Stock:
3,000
USA:
3,000
60,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$396.00
USD
Quantity
Unit Price
3,000
$0.132
6,000
$0.131
9,000
$0.13
12,000
$0.129
15,000+
$0.127
Product Variant Information section