text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Gallium Nitride MOSFETs (GaN MOSFETs)
  6. GAN7R0-150LBEZ

Nexperia | GAN7R0-150LBEZ

Manufacturer Part #

GAN7R0-150LBEZ

150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Gri

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia GAN7R0-150LBEZ - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 60A
No of Channels: 1
Qg Gate Charge: 12nC
Drain-to-Source Voltage [Vdss]: 100V
Gate-Source Voltage-Max [Vgss]: 6V
Input Capacitance: 1000pF
Rated Power Dissipation: 394W
Operating Temp Range: -40°C to +150°C
Package Style:  WLCSP-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
2,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
2500
Multiple Of:
2500
Total
$1,662.50
USD
Quantity
Unit Price
2,500+
$0.665
Product Variant Information section