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  5. Gallium Nitride MOSFETs (GaN MOSFETs)
  6. GANE3R9-150QBAZ

Nexperia | GANE3R9-150QBAZ

Manufacturer Part #

GANE3R9-150QBAZ

150V 100A 3.9Ohms N-Channel 25-VQFN(4X6)

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2449
Product Specification Section
Nexperia GANE3R9-150QBAZ - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 100A
No of Channels: 1
Qg Gate Charge: 20nC
Drain-to-Source Voltage [Vdss]: 150V
Gate-Source Voltage-Max [Vgss]: 6V
Input Capacitance: 2200pF
Rated Power Dissipation: 65W
Operating Temp Range: -40°C to +150°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$10,675.00
USD
Quantity
Unit Price
2,500+
$4.27
Product Variant Information section