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STMicroelectronics | A1P50S65M2

Manufacturer Part #

A1P50S65M2

A1P50S65M2 Series 650 V 50 A 208 W Trench Gate Field-Stop IGBT - ACEPACK™ 1

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics A1P50S65M2 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Power Dissipation-Tot: 208W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 100A
Collector - Emitter Saturation Voltage: 1.95V
Turn-on Delay Time: 143ns
Turn-off Delay Time: 112ns
Qg Gate Charge: 150nC
Reverse Recovery Time-Max: 142ns
Leakage Current: 500nA
Input Capacitance: 4150F
Thermal Resistance: 0.65°C/W
Operating Temp Range: -40°C to +150°C
No of Terminals: 22
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
36
Multiple Of:
18
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,387.08
USD
Quantity
Unit Price
18
$38.76
36
$38.53
54
$38.40
90
$38.22
180+
$37.86
Product Variant Information section