Manufacturer Part #
FGA60N65SMD
FGA60N65SMD Series 650 V 60 A Field Stop IGBT - TO-3PN
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:450 per Tube Package Style:TO-3PN Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi FGA60N65SMD - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi FGA60N65SMD - Technical Attributes
Attributes Table
| CE Voltage-Max: | 650V |
| Collector Current @ 25C: | 120A |
| Power Dissipation-Tot: | 600W |
| Turn-on Delay Time: | 18ns |
| Turn-off Delay Time: | 104ns |
| Package Style: | TO-3PN |
| Mounting Method: | Through Hole |
Features & Applications
The FGA60N65SMD is a Field Stop IGBT Transistor with 650 V of collector to emitter voltage and 60 A of forward current. This Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, Welder and PFC applications where low conduction and switching losses are essential.
Features:
- Maximum Junction Temperature : TJ =175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) =1. (Typ.) @ IC = 60 A
- Fast Switching
- Tighten Parameter Distribution
- RoHS Compliant
Applications:
- Solar Inverter, UPS, SMPS, Welder, PFC
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
51 Weeks
Quantity
Unit Price
450
$3.08
900
$3.06
1,350
$3.04
1,800
$3.03
2,250+
$3.00
Product Variant Information section
Available Packaging
Package Qty:
450 per Tube
Package Style:
TO-3PN
Mounting Method:
Through Hole