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STMicroelectronics | STGP19NC60KD

Manufacturer Part #

STGP19NC60KD

STGP Series IGBT Low On State Through Hole IGBT - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2352
Product Specification Section
STMicroelectronics STGP19NC60KD - Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 35A
Power Dissipation-Tot: 125W
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 75A
Collector - Emitter Saturation Voltage: 2.75V
Turn-on Delay Time: 30ns
Turn-off Delay Time: 105ns
Qg Gate Charge: 55nC
Reverse Recovery Time-Max: 31ns
Leakage Current: -100A
Input Capacitance: 1170pF
Thermal Resistance: 62.5°C/W
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The STGP19NC60KD is a 20 A - 600 V - short circuit rugged IGBT. It has an Operating temperature ranges b/w -55 °C to 150 °C and available in a TO-220 Package.

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Features:

  • Low on-voltage drop (VCE(sat))
  • Low Cres / Cies ratio (no cross conduction susceptibility)
  • Short circuit withstand time 10 μs
  • IGBT co-packaged with ultra fast free-wheeling diode

Applications:

  • High frequency inverters
  • Motor drivers
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,080.00
USD
Quantity
Unit Price
1,000
$1.08
2,000
$1.07
5,000+
$1.06
Product Variant Information section