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Infineon | BSC011N03LSATMA1

Manufacturer Part #

BSC011N03LSATMA1

Single N-Channel 30 V 1.1 mOhm 72 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC011N03LSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 1.1mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 72nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 6.7ns
Turn-off Delay Time: 37ns
Rise Time: 8.8ns
Fall Time: 6.2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 4700pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,350.00
USD
Quantity
Unit Price
5,000
$0.47
10,000
$0.465
15,000+
$0.46
Product Variant Information section