text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. BSC012N06NSATMA1

Infineon | BSC012N06NSATMA1

Manufacturer Part #

BSC012N06NSATMA1

60 V 36 A 1.2mOhm N-Channel OptiMOS 5 Power-Transistor - PG-TSON-8-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC012N06NSATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 1.2mΩ
Rated Power Dissipation: 214W
Qg Gate Charge: 143nC
Gate-Source Voltage-Max [Vgss]: 3.3V
Drain Current: 36A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 54ns
Rise Time: 15ns
Fall Time: 31ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.3V
Input Capacitance: 11000pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$8,200.00
USD
Quantity
Unit Price
5,000+
$1.64
Product Variant Information section