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Infineon | BSC030N03MSGATMA1

Manufacturer Part #

BSC030N03MSGATMA1

Single N-Channel 30 V 3 mOhm 55 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC030N03MSGATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 3mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 55nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 23ns
Rise Time: 10ns
Fall Time: 9.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 4300pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,750.00
USD
Quantity
Unit Price
5,000
$0.35
10,000
$0.345
20,000+
$0.34
Product Variant Information section