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Infineon Technologies | BSC097N06NSATMA1

Manufacturer Part #

BSC097N06NSATMA1

Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies BSC097N06NSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 9.7mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 46A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 10ns
Rise Time: 2ns
Fall Time: 2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Height - Max: 1.1mm
Length: 5.15mm
Input Capacitance: 860pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,850.00
USD
Quantity
Unit Price
5,000+
$0.37
Product Variant Information section